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High CMRR Instrumentation Amplifier (Schematic and Layout) design for biomedical applications

Instrumentation amplifiers are intended to be used whenever acquisition of a useful signal is difficult. IA’s must have extremely high input impedances because source impedances may be high and/or unbalanced. bias and offset currents are low and relatively stable so that the source impedance need not be constant. Balanced differential inputs are provided so that the signal source may be referenced to any reasonable level independent of the IA output load reference. Common mode rejection, a measure of input balance, is very high so that noise pickup and ground drops, characteristic of remote sensor applications, are minimized.Care is taken to provide high, well characterized stability of critical parameters under varying conditions, such as changing temperatures and supply voltages. Finally, all components that are critical to the performance of the IA are internal to the device. The precision of an IA is provided at the expense of flexibility. By committing to the one specific task of

MOS transistor structure

A MOSFET (Metal Oxide Semiconductor Field Effect Transistor), or MOS, as is commonly called, is an electronic device which converts change in input voltage into a change in output current. The basic structure of a MOS transistor (as seen sideways) is as shown in figure 1. The substrate is a lightly doped semiconductor. Source and Drain regions are heavily doped regions of type opposite to substrate. In-between source and drain is a region called channel. Above the channel is a very thin layer of oxide. 

The voltage is applied to input terminal, which is called "Gate" terminal. If sufficient voltage is applied at the gate terminal, a channel gets formed between source and drain terminals. Depending upon the nature of channel formed, MOS is termed as N-MOS or P-MOS.

N-MOS: For an N-MOS, substrate is P-type, source and drain regions are N-type. Application of a positive voltage at Gate terminal with respect to substrate will result in formation of channel of electrons.

P-MOS: For a P-MOS, substrate is N-type, source and drain regions are P-type. Application of a negative voltage at Gate terminal with respect to substrate will result in formation of channel of holes.


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