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High CMRR Instrumentation Amplifier (Schematic and Layout) design for biomedical applications

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Instrumentation amplifiers are intended to be used whenever acquisition of a useful signal is difficult. IA’s must have extremely high input impedances because source impedances may be high and/or unbalanced. bias and offset currents are low and relatively stable so that the source impedance need not be constant. Balanced differential inputs are provided so that the signal source may be referenced to any reasonable level independent of the IA output load reference. Common mode rejection, a measure of input balance, is very high so that noise pickup and ground drops, characteristic of remote sensor applications, are minimized.Care is taken to provide high, well characterized stability of critical parameters under varying conditions, such as changing temperatures and supply voltages. Finally, all components that are critical to the performance of the IA are internal to the device. The precision of an IA is provided at the expense of flexibility. By committing to the one specific task of
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What is meant by drive strength of a standard cell

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As we know that cell delay is a function of output load capacitance. The most simplistic equivalent circuit of a logic gate driving an output can be assumed as given in figure 1:


The purpose of logic gate is to propagate the effect of logic value available at its input to the output. Based upon whether '0' or '1' is to be propagated to the output. The corresponding is achieved by charging and discharging of the output load capacitance. Propagating a logic '0' will mean discharging of the load capacitance, and vice-versa. Drive strength of the logic gate is the its relative capability to charge/discharge the capacitance present at its output. Now, the time constant, and hence, delay of the circuit is "RC".
So, for a cell with higher drive strength, corresponding "R" is lesser than the one with lower drive strength. So that for same load capacitance "C", delay is lower for a cell with higher drive strength as it can charge the capacitance in lesser time.

How drive strength varies with size of a cell: Let us talk in terms of MOSFETs, although this is valid in terms of every device in general. We know that for a given technology standard cell library, length of all transistors is kept constant. For instance, 90 nm technology will have gate length of all transistors as ~90 nm. And channel resistance of the MOSFET is inversely proportional to "W/L" of the transistor. So, a simple way to decrease channel resistance is to increase "W" of the transistor. So, a transistor with more area will have lesser resistance. Or we can say that a logic gate with bigger transistors will have more drive strength.

What is unit drive strength: In a standard cell library, we generally see cells labelled as "1X", "2X" and so on. But what is meant by the number that you see with drive strength? In general, the lowest size logic gate is labelled as unit drive strength. The drive strength numbers of other cells are laelled relative to unit drive strength cell.

Read next: How delay of a cell changes with drive strength

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